unisonic technologies co., ltd UT40N03 power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2011 unisonic technologies co., ltd qw-r502-160.c 40 amps, 30 volts n-channel power mosfet ? description the UT40N03 power mosfet provide the designer with the best combination of fast switch ing,ruggedized device design, low on-resistance and cost-effectiveness ? features * r ds(on) = 17m ? @v gs = 10 v * low capacitance * optimized gate charge * fast switching capability * avalanche energy specified ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UT40N03l-tn3-r UT40N03g-tn3-r to-252 g d s tape reel UT40N03l-tm3-t UT40N03g-tm3-t to-251 g d s tube
UT40N03 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-160.c ? absolute maximum ratings (t j =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current i d 40 a pulsed drain current (note 1) i dm 169 a to-251 50 w total power dissipation to-252 p d 50 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are st ress ratings only and functional device operation is not implied. ? thermal data parameter symbol ratings unit to-251 62 /w junction to ambient to-25 2 ja 62 /w to-251 2.5 /w junction to case to-252 jc 2.5 /w ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250 a 30 v drain-source leakage current i dss v ds =30 v, v gs =0 v, t j =25 1 a gate- source leakage current i gss v gs = 20v 100 na on characteristics gate-threshold voltage v gs(th) v ds =v gs , i d =250 a 1 3 v v gs =10 v, i d =20 a 14 17 drain-source on-state resistance r ds(on) v gs =4.5 v, i d =16 a 20 23 m ? dynamic parameters input capacitance c iss 800 output capacitance c oss 380 reverse transfer capacitance c rss v ds =25 v, v gs =0v, f=1.0mhz 133 pf switching parameters turn-on delay time t d(on) 7.2 turn-on rise time t r 60 turn-off delay time t d(off) 22.5 turn-off fall-time t f v ds =15 v, i d =20 a, v gs =10v, r g =3.3 ? , r l =0.75 ? 10 ns total gate charge q g 17 gate-source charge q gs 3 gate-drain charge q gd v ds =24v,v gs =5 v,i d =20 a 10 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd t j =25 , i s =40a, v gs =0v 1.3 v maximum continuous drain-source diode forward current i s v d =v g =0v , v s =1.3v 40 maximum pulsed drain-source diode forward current i sm 169 a notes: 1. pulse width limited by t j(max) 2. pulse width 300us, duty cycle 2%.
UT40N03 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-160.c ? typical characteristics 150 100 50 0 0 12345 6 78 9 10 9 8 7 6 5 4 3 2 1 0 0 50 100 150 drain current,i d (a) drain-to-source voltage,v ds (v) typical output characteristics typical output characteristics drain-to-source voltage,v ds (v) drain current,i d (a) v g =3.0v t c =25 t c =150 v g =4.0v v g =6.0v v g =8.0v v g =10v v g =10v v g =8.0v v g =3.0v v g =4.0v v g =6.0v i d =20a v g =10v 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 0 50 100 150 junction temperature,t j ( ) normalized on-resistance vs. junction temperature normalized on-resistance,r ds(on) i d =20a t c =25 28 26 24 22 20 18 16 14 12 34567891011 gate-to-source voltage,v gs (v) on-resistance vs. gate voltage on-resistance,r ds(on) (m ) drain current,i d (a) power,p d (w)
UT40N03 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-160.c ? typical characteristics(cont.) 150 100 50 0 -50 junction temperature,t j ( ) 0 1 2 3 gate threshold voltage,v gs(th) (v) gate threshold voltage vs. junction temperature 10 100 1 0.1 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 forward characteristics of reverse diode reverse drain current,i s (a) body diode forward voltage,v sd (v) t j =150 t j =25 gate to source voltage,v gs (v) capacitance,c (pf) drain current,i d (a) normalized thermal response,r thjc
UT40N03 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-160.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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